Temperature Dependent Current-Voltage Characteristics of n-Type Nanocrystalline-FeSi<sub>2</sub>/p-Type Si Heterojunctions Fabricated by Pulsed Laser Deposition

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dc.contributor.authorNathaporn Promros
dc.contributor.authorRy_hei Iwasaki
dc.contributor.authorSuguru Funasaki
dc.contributor.authorKyohei Yamashita
dc.contributor.authorChen Li
dc.contributor.authorTomohiro Yoshitake
dc.date.accessioned2025-07-21T05:54:20Z
dc.date.issued2013-11-01
dc.identifier.doi10.4028/www.scientific.net/amr.858.171
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4266
dc.subjectThermionic emission
dc.subjectNanocrystalline material
dc.subjectEquivalent series resistance
dc.subjectPulsed Laser Deposition
dc.subjectAtmospheric temperature range
dc.subject.classificationSemiconductor materials and interfaces
dc.titleTemperature Dependent Current-Voltage Characteristics of n-Type Nanocrystalline-FeSi<sub>2</sub>/p-Type Si Heterojunctions Fabricated by Pulsed Laser Deposition
dc.typeArticle

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