Rational concept for fully designing metal-oxynitride films through reactive gas-timing magnetron sputtering: A case study on zinc oxynitride film

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dc.contributor.authorNarathon Khemasiri
dc.contributor.authorChanunthorn Chananonnawathorn
dc.contributor.authorMati Horprathum
dc.contributor.authorSupanit Pornthreeraphat
dc.contributor.authorBunpot Saekow
dc.contributor.authorApirak Pankiew
dc.contributor.authorAtipong Bootchanont
dc.contributor.authorPrayoon Songsiriritthigul
dc.contributor.authorHideki Nakajima
dc.contributor.authorPanita Kasamechonchung
dc.contributor.authorWinadda Wongwiriyapan
dc.contributor.authorAnnop Klamchuen
dc.contributor.authorJiti Nukeaw
dc.date.accessioned2026-05-08T19:18:32Z
dc.date.issued2025-7-15
dc.identifier.doi10.1016/j.jallcom.2025.182211
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/16576
dc.publisherJournal of Alloys and Compounds
dc.subjectZnO doping and properties
dc.subjectSemiconductor materials and devices
dc.subjectGa2O3 and related materials
dc.titleRational concept for fully designing metal-oxynitride films through reactive gas-timing magnetron sputtering: A case study on zinc oxynitride film
dc.typeArticle

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