Effects of Hydrogen Passivation on Near-Infrared Photodetection of n-Type _-FeSi<sub>2</sub>/p-Type Si Heterojunction Photodiodes

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dc.contributor.authorNathaporn Promros
dc.contributor.authorKyohei Yamashita
dc.contributor.authorRy_hei Iwasaki
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T05:53:16Z
dc.date.issued2012-10-01
dc.identifier.doi10.7567/jjap.51.108006
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/3648
dc.subjectPassivation
dc.subjectPhotodiode
dc.subjectPhotodetection
dc.subjectDangling bond
dc.subjectQuantum Efficiency
dc.subject.classificationSemiconductor materials and interfaces
dc.titleEffects of Hydrogen Passivation on Near-Infrared Photodetection of n-Type _-FeSi<sub>2</sub>/p-Type Si Heterojunction Photodiodes
dc.typeArticle

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