Chemical Characterization and Electrical Properties of Indium Oxynitride Grown by Reactive Gas-Timing RF Magnetron Sputtering

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dc.contributor.authorA. Sungthong
dc.contributor.authorP. Khomdet
dc.contributor.authorS. Porntheeraphat
dc.contributor.authorC. Hruanun
dc.contributor.authorAmporn Poyai
dc.contributor.authorJ. Nukeaw
dc.date.accessioned2025-07-21T05:51:07Z
dc.date.issued2010-01-01
dc.identifier.doi10.4028/www.scientific.net/amr.93-94.443
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/2406
dc.subjectAuger electron spectroscopy
dc.subjectCavity magnetron
dc.subject.classificationGaN-based semiconductor devices and materials
dc.titleChemical Characterization and Electrical Properties of Indium Oxynitride Grown by Reactive Gas-Timing RF Magnetron Sputtering
dc.typeArticle

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