RSM Base Study of the Effect of Argon Gas Flow Rate and Annealing Temperature on the [Bi]:[Te] Ratio and Thermoelectric Properties of Flexible Bi-Te Thin Film

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dc.contributor.authorPilaipon Nuthongkum
dc.contributor.authorAparporn Sakulkalavek
dc.contributor.authorRachsak Sakdanuphab
dc.date.accessioned2025-07-21T05:57:25Z
dc.date.issued2016-10-21
dc.identifier.doi10.1007/s11664-016-5024-1
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/6005
dc.subjectBismuth telluride
dc.subjectStoichiometry
dc.subjectBismuth
dc.subject.classificationAdvanced Thermoelectric Materials and Devices
dc.titleRSM Base Study of the Effect of Argon Gas Flow Rate and Annealing Temperature on the [Bi]:[Te] Ratio and Thermoelectric Properties of Flexible Bi-Te Thin Film
dc.typeArticle

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