A planar nanoporous silicon metal-semiconductor-metal visible light photodetector

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dc.contributor.authorAtiwongsangthong, Narin
dc.date.accessioned2026-08-06T10:07:34Z
dc.date.available2026-08-06T10:07:34Z
dc.date.issued2013-11-01
dc.description.abstractIn this work, the nanoporous silicon layer is prepared through the simple electrochemical etching of p-type crystalline silicon wafer in a hydrofluoric acid solution under various anodization conditions such as the resistivity of the silicon wafer, current density, concentration of the hydrofluoric acid solution and anodization time. The gravimetric method and SEM images have been used to characterize the morphological on the various porosity of nanoporous silicon layer. Two square Al Schottky contacts were thermally deposited on the nanoporous silicon layer with the electrode spacing is 500 μm to form a planar nanoporous silicon metal-semiconductor-metal (MSM) visible light photodetector. In experiment, we investigated photoresponse and the response time of a planar nanoporous silicon MSM visible light photodetector which was fabricated on the various porosity of a nanoporous silicon layer. It is found that when devices are fabricated on a higher porosity nanoporous silicon layer, the photoresponse of the device will expand toward the shorter-wavelengths and the bandwidth of the spectrum response will cover visible light. In addition, it is found that the response time of the device decreases. © 2013 American Scientific Publishers All rights reserved.
dc.identifier.citationAdvanced Science Letters, 19(11), 3131-3134, 2013
dc.identifier.doi10.1166/asl.2013.5165
dc.identifier.issn19366612
dc.identifier.other2-s2.0-84876384775
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/5142
dc.sourceAdvanced Science Letters
dc.subjectAnodization
dc.subjectMSM visible light photodetector
dc.subjectNanoporous silicon
dc.titleA planar nanoporous silicon metal-semiconductor-metal visible light photodetector
dc.typeArticle

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