Crucial role of reactive pulse-gas on a sputtered Zn<sub>3</sub>N<sub>2</sub> thin film formation

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dc.contributor.authorNarathon Khemasiri
dc.contributor.authorChanunthorn Chananonnawathorn
dc.contributor.authorAnnop Klamchuen
dc.contributor.authorSukittaya Jessadaluk
dc.contributor.authorApirak Pankiew
dc.contributor.authorSirajit Vuttivong
dc.contributor.authorPitak Eiamchai
dc.contributor.authorMati Horprathum
dc.contributor.authorSuppanit Pornthreeraphat
dc.contributor.authorPanita Kasamechonchung
dc.contributor.authorKittipong Tantisantisom
dc.contributor.authorThitikorn Boonkoom
dc.contributor.authorPrayoon Songsiririthigul
dc.contributor.authorHideki Nakajima
dc.contributor.authorJiti Nukeaw
dc.date.accessioned2025-07-21T05:56:35Z
dc.date.issued2016-01-01
dc.identifier.doi10.1039/c6ra09972f
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/5556
dc.subject.classificationZnO doping and properties
dc.titleCrucial role of reactive pulse-gas on a sputtered Zn<sub>3</sub>N<sub>2</sub> thin film formation
dc.typeArticle

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