Formation of HfOxNy nanorod GLAD films growth by rapid thermal oxidation

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dc.contributor.authorWuttichai Phae-ngam
dc.contributor.authorJedsada Prathumsit
dc.contributor.authorChanunthorn Chananonnawathorn
dc.contributor.authorHideki Nakajima
dc.contributor.authorTossaporn Lertvanithphol
dc.contributor.authorTawee Pogfay
dc.contributor.authorNutthamon Limsuwan
dc.contributor.authorD. Phokharatkul
dc.contributor.authorAthorn Vora–ud
dc.contributor.authorNarit Triamnak
dc.contributor.authorAraya Mungchamnankit
dc.contributor.authorMati Horprathum
dc.contributor.authorP. Limsuwan
dc.date.accessioned2026-05-08T19:21:42Z
dc.date.issued2022-10-1
dc.identifier.doi10.1016/j.vacuum.2022.111563
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/18179
dc.publisherVacuum
dc.subjectSemiconductor materials and devices
dc.subjectGa2O3 and related materials
dc.subjectZnO doping and properties
dc.titleFormation of HfOxNy nanorod GLAD films growth by rapid thermal oxidation
dc.typeArticle

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