Extraction of <i>J</i>�<i>V</i>, <i>G/_</i>�<i>V</i>�<i>f</i> and <i>C</i>�<i>V</i>�<i>f</i> Characteristics for <i>p</i>-Type Silicon/Intrinsic Ultrananocrystalline Diamond/<i>n</i>-Type Nanocrystalline Iron Disilicide Heterojunction Photodiodes

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dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorNathaporn Promros
dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorKenji Hanada
dc.contributor.authorLi Chen
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T06:02:07Z
dc.date.issued2019-08-06
dc.identifier.doi10.1166/jnn.2020.17295
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/8667
dc.subjectOhmic contact
dc.subjectEquivalent series resistance
dc.subjectDiffusion capacitance
dc.subjectPulsed Laser Deposition
dc.subject.classificationDiamond and Carbon-based Materials Research
dc.titleExtraction of <i>J</i>�<i>V</i>, <i>G/_</i>�<i>V</i>�<i>f</i> and <i>C</i>�<i>V</i>�<i>f</i> Characteristics for <i>p</i>-Type Silicon/Intrinsic Ultrananocrystalline Diamond/<i>n</i>-Type Nanocrystalline Iron Disilicide Heterojunction Photodiodes
dc.typeArticle

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