Physics-based bidirectional model of hot-carrier induced nmosfet degradation based on exponential interface state profile

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dc.contributor.authorW. Chaisirithavornkul
dc.contributor.authorV. Kasemsuwan
dc.date.accessioned2025-07-21T05:47:55Z
dc.date.issued2004-07-08
dc.identifier.doi10.1109/tencon.2003.1273184
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/620
dc.subjectSaturation (graph theory)
dc.subjectInterface (matter)
dc.subjectExponential decay
dc.subjectChannel length modulation
dc.subjectDegradation
dc.subject.classificationAdvancements in Semiconductor Devices and Circuit Design
dc.titlePhysics-based bidirectional model of hot-carrier induced nmosfet degradation based on exponential interface state profile
dc.typeArticle

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