Analytical treatment and modeling of integrated ring resonator device by Z-transform method for signals amplification

Unique configuration of integrated ring resonator circuit were modeled and discussed in this paper. The system consisted series of sub-micron size ring resonators fabricated by using nonlinear InGaAsP/InP material that laterally coupled together. This particular configuration is known as double PANDA ring resonator. For convenience of analysis, optical transfer function for this model is obtained by using Z-transform method. Equations governing pulse propagation within the system including output and circulated fields are discussed in details. Simulation results were based on analytical derivation. It suggested that intensity buildup is induced by the additional nanorings located ad both left and right sides of the system. This study mainly contribute towards the establishment of mathematical model of such system that able to predict accurately the practical operation processes of double PANDA ring resonator configuration.