The Design of Metal-Semiconductor-Metal Structure Magnetic Sensor

dc.contributor.authorChalin Sutthinet
dc.contributor.authorToempong Phetchakul
dc.contributor.authorWittaya Luanatikomkul
dc.contributor.authorAmporn Poyai
dc.date.accessioned2025-07-21T05:56:44Z
dc.date.issued2016-01-01
dc.description.abstractThis paper presents the MSM structure magnetic detector device that normally detects the electromagnetic wave. The device is special design for magnetic field detector and still detects the electromagnetic wave as normal function. The schottky diode with the split contacts structure allows us to reach this target. The device operates with the saturation current and the magnetic response is the current difference between two contacts which is injected from one metal and deflected in semiconductor toward to another metal. From the simulation result by Sentaurus TCAD, the relative sensitivity is 14.19 mT-1 at the current 0.3 μA. This device is the first MSM multi-sensor for magnetic and electromagnetic wave detector.
dc.identifier.doi10.1016/j.procs.2016.05.038
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/5619
dc.subjectSaturation current
dc.subjectSaturation (graph theory)
dc.subject.classificationMagnetic Field Sensors Techniques
dc.titleThe Design of Metal-Semiconductor-Metal Structure Magnetic Sensor
dc.typeArticle

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