Necessity of Epitaxial Growth of _-FeSi<sub>2</sub> Thin Films in Formation of n-Type _-FeSi<sub>2</sub>/p-Type Si Heterojunction Photodiodes

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dc.contributor.authorRyuhei Iwasaki
dc.contributor.authorNathaporn Promros
dc.contributor.authorKyohei Yamashita
dc.contributor.authorShota Izumi
dc.contributor.authorSuguru Funasaki
dc.contributor.authorMahnoud Shaban
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T05:53:47Z
dc.date.issued2013-03-15
dc.identifier.doi10.1149/05006.0157ecst
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/3941
dc.subjectPhotodiode
dc.subject.classificationSemiconductor materials and interfaces
dc.titleNecessity of Epitaxial Growth of _-FeSi<sub>2</sub> Thin Films in Formation of n-Type _-FeSi<sub>2</sub>/p-Type Si Heterojunction Photodiodes
dc.typeArticle

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