Impedance characteristics under different voltages of n-_-FeSi2/p-Si heterojunctions constructed via facing target sputtering

Simple item page
dc.contributor.authorNattakorn Borwornpornmetee
dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorAdison Nopparuchikun
dc.contributor.authorBoonchoat Paosawatyanyong
dc.contributor.authorPhongsaphak Sittimart
dc.contributor.authorTsuyoshi Yoshitake
dc.contributor.authorNathaporn Promros
dc.date.accessioned2025-07-21T06:09:27Z
dc.date.issued2023-06-24
dc.identifier.doi10.1016/j.mssp.2023.107671
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/12593
dc.subjectDissipation factor
dc.subject.classificationSemiconductor materials and interfaces
dc.titleImpedance characteristics under different voltages of n-_-FeSi2/p-Si heterojunctions constructed via facing target sputtering
dc.typeArticle

Files

Collections

All