Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering

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dc.contributor.authorN. Khemasiri
dc.contributor.authorS. Jessadaluk
dc.contributor.authorC. Chananonnawathorn
dc.contributor.authorS. Vuttivong
dc.contributor.authorT. Lertvanithphol
dc.contributor.authorM. Horprathum
dc.contributor.authorP. Eiamchai
dc.contributor.authorV. Patthanasettakul
dc.contributor.authorA. Klamchuen
dc.contributor.authorA. Pankiew
dc.contributor.authorS. Porntheeraphat
dc.contributor.authorJ. Nukeaw
dc.date.accessioned2025-07-21T05:57:09Z
dc.date.issued2016-08-07
dc.identifier.doi10.1016/j.surfcoat.2016.08.002
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/5890
dc.subjectAuger electron spectroscopy
dc.subjectEllipsometry
dc.subjectCavity magnetron
dc.subject.classificationSemiconductor materials and devices
dc.titleOptical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering
dc.typeArticle

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