Diode parameters and ultraviolet light detection characteristics of n-type silicon/p-type nanocrystalline diamond heterojunctions at different temperatures

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dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorNathaporn Promros
dc.contributor.authorAbdelrahman Zkria
dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorEslam Abubakr
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T06:03:48Z
dc.date.issued2020-07-07
dc.identifier.doi10.1016/j.tsf.2020.138222
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/9586
dc.subjectPhotocurrent
dc.subjectUltraviolet
dc.subject.classificationDiamond and Carbon-based Materials Research
dc.titleDiode parameters and ultraviolet light detection characteristics of n-type silicon/p-type nanocrystalline diamond heterojunctions at different temperatures
dc.typeArticle

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