Observations of the initial stages on reactive gas-timing sputtered TaO thin films by dynamic in situ spectroscopic ellipsometery

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dc.contributor.authorD. Chittinan
dc.contributor.authorP. Buranasiri
dc.contributor.authorT. Lertvanithphol
dc.contributor.authorP. Eiamchai
dc.contributor.authorV. Patthanasettakul
dc.contributor.authorC. Chananonnawathorn
dc.contributor.authorS. Limwichean
dc.contributor.authorN. Nuntawong
dc.contributor.authorA. Klamchuen
dc.contributor.authorP. Muthitamongkol
dc.contributor.authorP. Limsuwan
dc.contributor.authorP. Chindaudom
dc.contributor.authorJ. Nukeaw
dc.contributor.authorH. Nakajima
dc.contributor.authorM. Horprathum
dc.date.accessioned2025-07-21T06:01:32Z
dc.date.issued2019-04-24
dc.identifier.doi10.1016/j.optmat.2019.04.040
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/8309
dc.subjectEllipsometry
dc.subject.classificationSemiconductor materials and devices
dc.titleObservations of the initial stages on reactive gas-timing sputtered TaO thin films by dynamic in situ spectroscopic ellipsometery
dc.typeArticle

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