Investigation of Oxygen Contamination in Indium Nitride Thin Film by X-Ray Absorption Fine Structure

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dc.contributor.authorK. Amnuyswat
dc.contributor.authorPitiporn Thanomngam
dc.contributor.authorSuwat Sopitpan
dc.contributor.authorA. Sungthong
dc.contributor.authorSupanit Porntheeraphat
dc.contributor.authorJ. Nukeaw
dc.date.accessioned2025-07-21T05:51:08Z
dc.date.issued2010-01-01
dc.identifier.doi10.4028/www.scientific.net/amr.93-94.493
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/2441
dc.subjectWurtzite crystal structure
dc.subjectIndium nitride
dc.subjectAuger electron spectroscopy
dc.subjectXANES
dc.subject.classificationGaN-based semiconductor devices and materials
dc.titleInvestigation of Oxygen Contamination in Indium Nitride Thin Film by X-Ray Absorption Fine Structure
dc.typeArticle

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