Removing the transients electron trapping in P-N junction diode by using soft X-ray annealing method

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dc.contributor.authorSurada Ueamanapong
dc.contributor.authorItsara Srithanachai
dc.contributor.authorSurasak Niemcharoen
dc.contributor.authorAmporn Poyai
dc.date.accessioned2025-07-21T05:54:31Z
dc.date.issued2014-01-01
dc.identifier.doi10.1504/ijmpt.2014.062948
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4365
dc.subjectp�n junction
dc.subjectPIN diode
dc.subjectDeep-level transient spectroscopy
dc.subject.classificationIntegrated Circuits and Semiconductor Failure Analysis
dc.titleRemoving the transients electron trapping in P-N junction diode by using soft X-ray annealing method
dc.typeArticle

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