Surface Thermal and Electric charge of PN Diode Expose by Soft Radiation Flash Exposure

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dc.contributor.authorN Sangwaranatee
dc.contributor.authorI Srithanachai
dc.contributor.authorS Niemcharoen
dc.contributor.authorS Chaiyasoonthorn
dc.date.accessioned2025-07-21T06:02:53Z
dc.date.issued2020-01-01
dc.description.abstractAbstract In this study present the effect of soft radiation flash exposure (SRFE) to forward bias current-voltage (I-V) of PN diode by using COMSOL simulation program. The results show surface thermal and electric change while expose by radiation with flash exposure technique. Series resistance (R s ) increase around 2 times and close to idea case after expose by radiation, the radiation will impact to bulk defect and reduce surface recombination. SRFE induce temperature on surface and deep into silicon bulk. The value of R s increase with increase expose time. The changing of R s becomes independent from radiation dose at high forward bias voltage.
dc.identifier.doi10.1088/1742-6596/1428/1/012038
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/9098
dc.subjectEXPOSE
dc.subjectPIN diode
dc.subjectBiasing
dc.subject.classificationAdvancements in Semiconductor Devices and Circuit Design
dc.titleSurface Thermal and Electric charge of PN Diode Expose by Soft Radiation Flash Exposure
dc.typeArticle

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