Horizontal Magnetic Field MAGFET by Conventional MOSFET Structure

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dc.contributor.authorRattapong Nakachai
dc.contributor.authorSawatdipong Poonsawat
dc.contributor.authorChalin Sutthinet
dc.contributor.authorAnucha Ruangphanit
dc.contributor.authorAmporn Poyai
dc.contributor.authorToempong Phetchakul
dc.date.accessioned2025-07-21T05:59:40Z
dc.date.issued2018-03-01
dc.identifier.doi10.1109/ieecon.2018.8712249
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/7302
dc.subjectLorentz force
dc.subjectHall effect sensor
dc.subjectCurrent sensor
dc.subject.classificationMagnetic Field Sensors Techniques
dc.titleHorizontal Magnetic Field MAGFET by Conventional MOSFET Structure
dc.typeArticle

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