Effect on C-V characteristics of P-N photodetector

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dc.contributor.authorChaiyasoonthorn, Sawatsakorn
dc.contributor.authorSrithanachai, Itsara
dc.contributor.authorSangwaranatee, Narong
dc.date.accessioned2026-08-06T10:16:01Z
dc.date.available2026-08-06T10:16:01Z
dc.date.issued2017-02-01
dc.description.abstractThis paper is aimed at investigating the way to reduce the Pt-doped effect on silicon N-Type photodetector. The influencing of Pt-doped on silicon mechanism is an important problem because the performance of semiconductor device may decrease as a result from this process. In this paper, the obtained experimental result has shown that the Roentgen radiation can be used to reduce the influence from Pt-doped process, where C-V characteristics are the parameters to study in this experiment, from which the Roentgen radiation characteristics may change because the silicon bulk absorbs radiation of about 60%. The results have indicated that the C-V characteristics are not significantly changed. This way, radiation may induce and reduce some of the defects in silicon bulk but C-V is without change. Accordingly, parameters should be investigated to explain the defects to confirm the influence of Roentgen radiation by I-V characteristics and carrier concentration.
dc.identifier.citationFar East Journal of Electronics and Communications, 17(1), 165-172, 2017
dc.identifier.doi10.17654/EC017010165
dc.identifier.issn09737006
dc.identifier.other2-s2.0-85017209180
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/7471
dc.sourceFar East Journal of Electronics and Communications
dc.subjectAbsorption
dc.subjectP-N photodetector
dc.subjectPenetration
dc.subjectRoentgen radiation
dc.titleEffect on C-V characteristics of P-N photodetector
dc.typeArticle

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