Conduction Mechanisms in CVD-Grown Monolayer MoS<sub>2</sub> Transistors: From Variable-Range Hopping to Velocity Saturation

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dc.contributor.authorG. He
dc.contributor.authorK. Ghosh
dc.contributor.authorU. Singisetti
dc.contributor.authorH. Ramamoorthy
dc.contributor.authorR. Somphonsane
dc.contributor.authorG. Bohra
dc.contributor.authorM. Matsunaga
dc.contributor.authorA. Higuchi
dc.contributor.authorN. Aoki
dc.contributor.authorS. Najmaei
dc.contributor.authorY. Gong
dc.contributor.authorX. Zhang
dc.contributor.authorR. Vajtai
dc.contributor.authorP. M. Ajayan
dc.contributor.authorJ. P. Bird
dc.date.accessioned2025-07-21T05:56:02Z
dc.date.issued2015-06-29
dc.identifier.doi10.1021/acs.nanolett.5b01159
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/5229
dc.subjectVariable-range hopping
dc.subjectVelocity saturation
dc.subjectSaturation (graph theory)
dc.subjectSaturation velocity
dc.subjectElectron Mobility
dc.subject.classification2D Materials and Applications
dc.titleConduction Mechanisms in CVD-Grown Monolayer MoS<sub>2</sub> Transistors: From Variable-Range Hopping to Velocity Saturation
dc.typeArticle

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