Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering

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dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorNathaporn Promros
dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorNattakorn Borwornpornmetee
dc.contributor.authorPattarapol Sittisart
dc.contributor.authorPhongsaphak Sittimart
dc.contributor.authorY_ki Tanaka
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T06:03:48Z
dc.date.issued2020-07-10
dc.identifier.doi10.1016/j.tsf.2020.138229
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/9590
dc.subjectPhotocurrent
dc.subjectEquivalent series resistance
dc.subject.classificationSemiconductor materials and interfaces
dc.titlePhotovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering
dc.typeArticle

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