0.3 v Fully Differential Current Conveyor Using MIBD-DT MOST technique

dc.contributor.authorKumngern, Montree
dc.contributor.authorTorteanchai, Usa
dc.contributor.authorWongprommoon, Natapong
dc.contributor.authorJongchanachavawat, Wirote
dc.contributor.authorTooprakai, Siraphop
dc.contributor.authorLerkvaranyu, Somkiat
dc.date.accessioned2026-08-06T10:34:20Z
dc.date.available2026-08-06T10:34:20Z
dc.date.issued2022-01-01
dc.description.abstractThis paper presents a new fully differential second-generation current conveyor (FDCCII) using multiple-input bulk-driven dynamic threshold voltage MOS transistor (MIBD-DT MOST) technique. This FDCCII, the MOST techniques such as the multiple-input (MI), bulk-driven (BD) and dynamic threshold voltage (DT) have been used. The MIBD can be reduced the number of differential pair of FDCCII and the DT-MOST technique can be reduced the power supply requirement. Thus, the proposed FDCCII is capable to working with a supply voltage of 0.3 V and it consumes a 0.132 uW of power dissipation. The simulations were performed with SPICE program using the 0.18 um CMOS technology. To prove the workability of the new circuit, the proposed FDCCII has been used to realize universal filter.
dc.identifier.citation2022 International Symposium on Intelligent Signal Processing and Communication Systems Ispacs 2022, 2022
dc.identifier.doi10.1109/ISPACS57703.2022.10082798
dc.identifier.other2-s2.0-85152270412
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/12485
dc.source2022 International Symposium on Intelligent Signal Processing and Communication Systems Ispacs 2022
dc.subjectdynamic threshold voltage MOS transistor
dc.subjectfully differential current conveyor
dc.subjectmultiple-input MOS transistor
dc.title0.3 v Fully Differential Current Conveyor Using MIBD-DT MOST technique
dc.typeConference Paper

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