Development of Flexible Semiconductors Based on g-C3N4/Cu2O P–N Heterojunction for Triboelectric Nanogenerator Application

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dc.contributor.authorWorathat, Supakarn
dc.contributor.authorPharino, Utchawadee
dc.contributor.authorSriphan, Saichon
dc.contributor.authorNiemcharoen, Surasak
dc.contributor.authorThitirungraung, Wisut
dc.contributor.authorMuanghlua, Rangson
dc.contributor.authorChiu, Te Wei
dc.contributor.authorVittayakorn, Naratip
dc.date.accessioned2026-08-06T10:39:22Z
dc.date.available2026-08-06T10:39:22Z
dc.date.issued2023-01-01
dc.description.abstractThis research aims to develop flexible semiconductors for triboelectric nanogenerator (TENG) applications. The sample powders of graphitic carbon nitride (g-C<inf>3</inf>N<inf>4</inf>) and copper (I) oxide (Cu<inf>2</inf>O) as N-type and P-type semiconductors, respectively, were synthesized. The semiconductors were prepared to be a composite film with alginate. The structure, morphology, and purity of the N- and P-type semiconductors were characterized using X-Ray diffraction and scanning electron microscopy techniques. Through the optical characterization, the N-type semiconductor showed the calculated energy band gap of 2.80 eV, while the P-type semiconductor was 1.90 eV. The P–N junction property of prepared samples was confirmed using a nonlinear current–voltage characteristic. After that, two flexible semiconductors were frictional paired for TENG. Through a vertical contact-separation mode, the P–N junction-based TENG produced a maximum output voltage and current of 3.90 V and 0.44 µA, respectively, with a maximum output power of 0.35 µW at 10 MΩ. In summary, the present work achieved the preparation of flexible P- and N-type semiconductors. The feasibility to harvest the mechanical energy was demonstrated in the TENG configuration. This idea is crucial for the future development of flexible harvesting/sensing devices using a novel concept.
dc.identifier.citationIntegrated Ferroelectrics, 238(1), 13-24, 2023
dc.identifier.doi10.1080/10584587.2023.2234568
dc.identifier.issn10584587
dc.identifier.other2-s2.0-85173555928
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/13849
dc.sourceIntegrated Ferroelectrics
dc.subjectN-type semiconductor
dc.subjectP-type semiconductor
dc.subjectP–N Junction
dc.subjecttriboelectric nanogenerator
dc.titleDevelopment of Flexible Semiconductors Based on g-C3N4/Cu2O P–N Heterojunction for Triboelectric Nanogenerator Application
dc.typeArticle

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