A physical DC model of short channel MOS transistor using trapezoidal Gaussian surface

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dc.contributor.authorW. Chaisirithavornkul
dc.contributor.authorV. Kasemsuwan
dc.date.accessioned2025-07-21T05:47:15Z
dc.date.issued2002-11-11
dc.identifier.doi10.1109/smelec.2000.932300
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/295
dc.subjectChannel length modulation
dc.subjectSaturation (graph theory)
dc.subjectVelocity saturation
dc.subjectGaussian surface
dc.subjectSaturation velocity
dc.subjectShort-channel effect
dc.subject.classificationSilicon Carbide Semiconductor Technologies
dc.titleA physical DC model of short channel MOS transistor using trapezoidal Gaussian surface
dc.typeArticle

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