Effect of B doping on electrical and thermal properties of SiC bodies fabricated by spark plasma sintering

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dc.contributor.authorYukina Taki
dc.contributor.authorMettaya Kitiwan
dc.contributor.authorHirokazu Katsui
dc.contributor.authorTakashi Goto
dc.date.accessioned2025-07-21T06:01:00Z
dc.date.issued2019-01-01
dc.identifier.doi10.1016/j.matpr.2019.05.249
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/8035
dc.subjectSpark Plasma Sintering
dc.subjectAtmospheric temperature range
dc.subject.classificationSilicon Carbide Semiconductor Technologies
dc.titleEffect of B doping on electrical and thermal properties of SiC bodies fabricated by spark plasma sintering
dc.typeArticle

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