Effect of Operated Pressure on Anticorrosive Behavior of Ta<sub>2</sub>O<sub>5</sub> Thin Film Grown by D.C. Reactive Magnetron Sputtering System

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dc.contributor.authorNarathon Khemasiri
dc.contributor.authorChanunthorn Chananonnawathorn
dc.contributor.authorMati Horprathum
dc.contributor.authorYossawat Rayanasukha
dc.contributor.authorDarinee Phromyothin
dc.contributor.authorWin Bunjongpru
dc.contributor.authorSupanit Porntheeraphat
dc.contributor.authorJiti Nukeaw
dc.date.accessioned2025-07-21T05:54:08Z
dc.date.issued2013-09-01
dc.identifier.doi10.4028/www.scientific.net/amr.802.242
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4141
dc.subjectEllipsometry
dc.subjectCavity magnetron
dc.subject.classificationSemiconductor materials and devices
dc.titleEffect of Operated Pressure on Anticorrosive Behavior of Ta<sub>2</sub>O<sub>5</sub> Thin Film Grown by D.C. Reactive Magnetron Sputtering System
dc.typeArticle

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