Pressure-dependent elastic constants and sound velocities of wurtzite SiC, GaN, InN, ZnO, and CdSe, and their relation to the high-pressure phase transition: A first-principles study

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dc.contributor.authorKanoknan Sarasamak
dc.contributor.authorSukit Limpijumnong
dc.contributor.authorWalter R. L. Lambrecht
dc.date.accessioned2025-07-21T05:51:29Z
dc.date.issued2010-07-01
dc.identifier.doi10.1103/physrevb.82.035201
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/2622
dc.subjectWurtzite crystal structure
dc.subject.classificationGaN-based semiconductor devices and materials
dc.titlePressure-dependent elastic constants and sound velocities of wurtzite SiC, GaN, InN, ZnO, and CdSe, and their relation to the high-pressure phase transition: A first-principles study
dc.typeArticle

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