Spectroscopic study on amorphous tantalum oxynitride thin films prepared by reactive gas-timing RF magnetron sputtering

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dc.contributor.authorT. Lertvanithphol
dc.contributor.authorW. Rakreungdet
dc.contributor.authorC. Chananonnawathorn
dc.contributor.authorP. Eiamchai
dc.contributor.authorS. Limwichean
dc.contributor.authorN. Nuntawong
dc.contributor.authorV. Patthanasettakul
dc.contributor.authorA. Klamchuen
dc.contributor.authorN. Khemasiri
dc.contributor.authorJ. Nukeaw
dc.contributor.authorK. Seawsakul
dc.contributor.authorC. Songsiriritthigul
dc.contributor.authorN. Chanlek
dc.contributor.authorH. Nakajima
dc.contributor.authorP. Songsiriritthigul
dc.contributor.authorM. Horprathum
dc.date.accessioned2025-07-21T06:01:44Z
dc.date.issued2019-06-20
dc.identifier.doi10.1016/j.apsusc.2019.06.199
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/8435
dc.subjectTantalum pentoxide
dc.subjectSilicon oxynitride
dc.subjectEllipsometry
dc.subject.classificationSemiconductor materials and devices
dc.titleSpectroscopic study on amorphous tantalum oxynitride thin films prepared by reactive gas-timing RF magnetron sputtering
dc.typeArticle

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