Giant suppression of dielectric loss in BaZrO3

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dc.contributor.authorKolodiazhnyi, T.
dc.contributor.authorPulphol, P.
dc.contributor.authorVittayakorn, W.
dc.contributor.authorVittayakorn, N.
dc.date.accessioned2026-08-06T10:26:20Z
dc.date.available2026-08-06T10:26:20Z
dc.date.issued2019-11-01
dc.description.abstractWe report the effect of precursor's purity and heterovalent substitution on the microstructure and dielectric properties of BaZrO<inf>3</inf> ceramics. We find that independent of the purity or raw materials, the dielectric loss of BaZrO<inf>3</inf> at microwave frequencies is rather high with a Q factor in the range of 1000–3000 at 10 GHz. All stoichiometric ceramics studied show up to three types of low-T dielectric relaxations in the 2–250 K range. All these dielectric anomalies can be suppressed by partial substitution of Zr for Nb. By alloying of BaZrO<inf>3</inf> with a hypothetical BaGa<inf>1/2</inf>Nb<inf>1/2</inf>O<inf>3</inf> phase the Q × f value of ceramics at microwave frequency can be improved significantly. The origin of this remarkable improvement is attributed to the effect of the donor ions on the random electric fields and antiferrodistortive instability. Ceramic with a chemical composition of BaZr<inf>0.96</inf>Ga<inf>0.02</inf>Nb<inf>0.02</inf>O<inf>3</inf> sintered at 1600 °C shows dielectric constant, ε′ = 36.7, temperature coefficient of the resonance frequency, τ<inf>f</inf> = +110 ppm/°C and Q × f = 172 THz.
dc.identifier.citationJournal of the European Ceramic Society, 39(14), 4144-4148, 2019
dc.identifier.doi10.1016/j.jeurceramsoc.2019.06.037
dc.identifier.issn09552219
dc.identifier.other2-s2.0-85067900799
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/10350
dc.sourceJournal of the European Ceramic Society
dc.subjectBaZrO3
dc.subjectDielectric loss
dc.subjectDielectric resonators
dc.subjectPoint defects
dc.subjectSintering
dc.titleGiant suppression of dielectric loss in BaZrO3
dc.typeArticle

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