Carrier lifetime of platinum doped P-N diode after irradiation by soft X-ray

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dc.contributor.authorNararug, Budsara
dc.contributor.authorSrithanachai, Itsara
dc.contributor.authorUeamanapong, Surada
dc.contributor.authorKhunkhao, Sanya
dc.contributor.authorJanprapha, Supakorn
dc.contributor.authorThongnak, Thanawat
dc.contributor.authorAtiwongsangthong, Narin
dc.contributor.authorNiemcharoen, Surasak
dc.date.accessioned2026-08-06T10:07:04Z
dc.date.available2026-08-06T10:07:04Z
dc.date.issued2013-08-30
dc.description.abstractThis paper analyzes the effect of X-ray irradiation on the electrical properties of Pt-doped p-n diode. X-ray energy irradiated on Pt-doped P-N diode with 70 keV with time 205 sec. After irradiations, the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics and carrier degeneration lifetime (τ<inf>g</inf>) were investigated. The results show that the leakage current is slightly increased after the diodes were exposed X-ray and affect higher degeneration carrier lifetime. The effects after X-ray irradiation indicated that the defects of the diode have been changed. © (2013) Trans Tech Publications Switzerland.
dc.identifier.citationAdvanced Materials Research, 717, 117-120, 2013
dc.identifier.doi10.4028/www.scientific.net/AMR.717.117
dc.identifier.issn10226680
dc.identifier.other2-s2.0-84882991388
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4991
dc.sourceAdvanced Materials Research
dc.subjectGeneration carrier lifetime
dc.subjectI-V and C-V characteristic
dc.subjectP-n junction
dc.subjectX-ray
dc.titleCarrier lifetime of platinum doped P-N diode after irradiation by soft X-ray
dc.typeConference Paper

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