The Effect of X-Ray Irradiation on the Electrical Properties of Pt-Doped P-N Diode

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dc.contributor.authorSupakorn Janprapha
dc.contributor.authorItsara Srithanachai
dc.contributor.authorSurada Ueamanapong
dc.contributor.authorSunya Khunkhao
dc.contributor.authorThanawat Thongnak
dc.contributor.authorSani Klinsanit
dc.contributor.authorSurasak Niemcharoen
dc.date.accessioned2025-07-21T05:53:59Z
dc.date.issued2013-07-01
dc.identifier.doi10.4028/www.scientific.net/amr.717.121
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4069
dc.subjectEquivalent series resistance
dc.subjectReverse leakage current
dc.subjectLeakage (economics)
dc.subject.classificationSemiconductor materials and interfaces
dc.titleThe Effect of X-Ray Irradiation on the Electrical Properties of Pt-Doped P-N Diode
dc.typeArticle

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