Study of Annealing Influence on Basic Properties of Indium Tin Oxide Nanorod Films Deposited Using Glancing Angle Ion-Assisted Electron Beam Evaporation

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dc.contributor.authorNathaporn Promros
dc.contributor.authorPitoon Noymaliwan
dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorSupanit Porntheeraphat
dc.contributor.authorBunpot Saekow
dc.contributor.authorTanapoj Chaikeeree
dc.contributor.authorBenjarong Samransuksamer
dc.contributor.authorPeerapong Nuchuay
dc.contributor.authorChanunthorn Chananonnawathorn
dc.contributor.authorSaksorn Limwichean
dc.contributor.authorMati Horprathum
dc.contributor.authorPitak Eiamchai
dc.contributor.authorViyapol Patthanasettakul
dc.date.accessioned2025-07-21T06:00:49Z
dc.date.issued2018-11-22
dc.identifier.doi10.1166/jnn.2019.16228
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/7931
dc.subjectNanorod
dc.subjectIndium tin oxide
dc.subjectChemical bath deposition
dc.subject.classificationGaN-based semiconductor devices and materials
dc.titleStudy of Annealing Influence on Basic Properties of Indium Tin Oxide Nanorod Films Deposited Using Glancing Angle Ion-Assisted Electron Beam Evaporation
dc.typeArticle

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