An Improvement of the Breakdown Voltage Characteristics of NPT-TIGBT by Using a P-Buried Layer

Simple item page
dc.contributor.authorPhasapon Manosukritkul
dc.contributor.authorAmonrat Kerdpardist
dc.contributor.authorMontree Saenlamool
dc.contributor.authorEkalak Chaowicharat
dc.contributor.authorAmporn Poyai
dc.contributor.authorWisut Titiroongruang
dc.date.accessioned2025-07-21T05:53:58Z
dc.date.issued2013-07-01
dc.identifier.doi10.4028/www.scientific.net/amr.717.158
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4053
dc.subjectHigh Voltage
dc.subject.classificationSilicon Carbide Semiconductor Technologies
dc.titleAn Improvement of the Breakdown Voltage Characteristics of NPT-TIGBT by Using a P-Buried Layer
dc.typeArticle

Files

Collections

All