Electric field- and strain-induced bandgap modulation in bilayer C2N

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dc.contributor.authorKlichchupong Dabsamut
dc.contributor.authorTosapol Maluangnont
dc.contributor.authorPakpoom Reunchan
dc.contributor.authorJiraroj T-Thienprasert
dc.contributor.authorSirichok Jungthawan
dc.contributor.authorAdisak Boonchun
dc.date.accessioned2025-07-21T06:07:04Z
dc.date.issued2022-05-16
dc.identifier.doi10.1063/5.0093060
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/11311
dc.subject.classificationGraphene research and applications
dc.titleElectric field- and strain-induced bandgap modulation in bilayer C2N
dc.typeArticle

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