An extreme change in structural and optical properties of indium oxynitride deposited by reactive gas-timing RF magnetron sputtering

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dc.contributor.authorA. Sungthong
dc.contributor.authorS. Porntheeraphat
dc.contributor.authorA. Poyai
dc.contributor.authorJ. Nukeaw
dc.date.accessioned2025-07-21T05:49:37Z
dc.date.issued2008-04-18
dc.identifier.doi10.1016/j.apsusc.2008.04.038
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/1582
dc.subjectIndium nitride
dc.subjectIndium tin oxide
dc.subjectCavity magnetron
dc.subject.classificationGaN-based semiconductor devices and materials
dc.titleAn extreme change in structural and optical properties of indium oxynitride deposited by reactive gas-timing RF magnetron sputtering
dc.typeArticle

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