A novel to control defects of P-N semiconductor device by SRFE process

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dc.contributor.authorN. Sangwaranatee
dc.contributor.authorItsara Srithanachai
dc.contributor.authorSurasak Niemcharoen
dc.date.accessioned2026-05-08T19:21:50Z
dc.date.issued2021-2-1
dc.description.abstractAbstract This paper present the results from soft radiation flash exposure (SRFE) process. In principle of semiconductor device always has defect in structure from fabrication process and impact from usage environment. Although, device have control process but still has unexpected defects. Then, I would like to share results of SRFE process to control defects in P-N semiconductor device by exposed on device for few second with optimize radiation energy. The defects has disappear after passed SRFE process. The optimize of exposure energy and time will cure or remove defect in devices structure.
dc.identifier.doi10.1088/1757-899x/1070/1/012010
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/18217
dc.publisherIOP Conference Series Materials Science and Engineering
dc.subjectSemiconductor materials and devices
dc.subjectRadiation Effects in Electronics
dc.subjectSilicon and Solar Cell Technologies
dc.titleA novel to control defects of P-N semiconductor device by SRFE process
dc.typeArticle

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