A comprehensive treatment of parametric effect in a silicon microring resonator

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dc.contributor.authorNawi, I. N.M.
dc.contributor.authorAli, J.
dc.contributor.authorYupapin, P. P.
dc.date.accessioned2026-08-06T10:13:52Z
dc.date.available2026-08-06T10:13:52Z
dc.date.issued2016-05-18
dc.description.abstractSilicon microring resonator provides a new platform to form the building block for all-optical circuits, where it could be integrated on a single chip as a passive or active components. Here, we report a comprehensive treatment of parametric effect in a symmetrical add/drop silicon microring resonator with 5 μm radius operating within telecom wavelength spectrum or C-band ranging from 1530 nm to 1565 nm. The power outputs of the system are analyzed by using transfer matrix method. The FSR and FWHM have been optimized. The results demonstrated here will pave the way towards the new on-chip and chip-to-chip architecture and structure for low power and high bandwidth applications especially for all-optical switch and optical modulator.
dc.identifier.citationProceedings 2015 IEEE Conference on System Process and Control Icspc 2015, 140-145, 2016
dc.identifier.doi10.1109/SPC.2015.7473574
dc.identifier.other2-s2.0-85009061047
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/6883
dc.sourceProceedings 2015 IEEE Conference on System Process and Control Icspc 2015
dc.subjectAll-optical Switch
dc.subjectCMOS technology
dc.subjectDWDM network.
dc.subjectSilicon Microring resonator
dc.titleA comprehensive treatment of parametric effect in a silicon microring resonator
dc.typeConference Paper

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