Asymmetrical resonant cavity thin film devices designed for vanadium dioxide applications

dc.contributor.authorChettanat Padungatthakij
dc.contributor.authorSurawut Wicharn
dc.contributor.authorPrathan Buranasiri
dc.date.accessioned2026-05-08T19:25:01Z
dc.date.issued2025-7-15
dc.description.abstractVanadium dioxide (VO2) is a volatile phase change material (PCM) that undergoes a rapid structure transition when heated above and reverts when cooled below its transition temperature. This transition alters its optical properties significantly when compared to normal materials, making it possible to design a thin film device with switching operation mode. In this paper, we redesign VO2-based devices with two different use cases to introduce an asymmetrical resonant cavity (AsymReca) structure. The redesigned process aimed to enhance the optical performance of the central VO2 layer and gave it an antireflection property. Using simulation, we discuss the advantages and limitations of this design approach and highlighting its potential use case.
dc.identifier.doi10.1117/12.3070461
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/19892
dc.subjectSemiconductor Lasers and Optical Devices
dc.titleAsymmetrical resonant cavity thin film devices designed for vanadium dioxide applications
dc.typeArticle

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