Asymmetrical resonant cavity thin film devices designed for vanadium dioxide applications
| dc.contributor.author | Chettanat Padungatthakij | |
| dc.contributor.author | Surawut Wicharn | |
| dc.contributor.author | Prathan Buranasiri | |
| dc.date.accessioned | 2026-05-08T19:25:01Z | |
| dc.date.issued | 2025-7-15 | |
| dc.description.abstract | Vanadium dioxide (VO2) is a volatile phase change material (PCM) that undergoes a rapid structure transition when heated above and reverts when cooled below its transition temperature. This transition alters its optical properties significantly when compared to normal materials, making it possible to design a thin film device with switching operation mode. In this paper, we redesign VO2-based devices with two different use cases to introduce an asymmetrical resonant cavity (AsymReca) structure. The redesigned process aimed to enhance the optical performance of the central VO2 layer and gave it an antireflection property. Using simulation, we discuss the advantages and limitations of this design approach and highlighting its potential use case. | |
| dc.identifier.doi | 10.1117/12.3070461 | |
| dc.identifier.uri | https://dspace.kmitl.ac.th/handle/123456789/19892 | |
| dc.subject | Semiconductor Lasers and Optical Devices | |
| dc.title | Asymmetrical resonant cavity thin film devices designed for vanadium dioxide applications | |
| dc.type | Article |