Electrical Properties of Nanostructure n-ZnSe/p-Si(100) Heterojunction Thin Film Diode

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dc.contributor.authorNgamnit Wongcharoen
dc.contributor.authorThitinai Gaewdang
dc.date.accessioned2025-07-21T06:00:19Z
dc.date.issued2018-08-01
dc.identifier.doi10.4028/www.scientific.net/kem.775.246
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/7666
dc.subjectThermionic emission
dc.subjectSaturation current
dc.subjectEquivalent series resistance
dc.subjectAtmospheric temperature range
dc.subject.classificationSemiconductor materials and interfaces
dc.titleElectrical Properties of Nanostructure n-ZnSe/p-Si(100) Heterojunction Thin Film Diode
dc.typeArticle

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