Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

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dc.contributor.authorSani Klinsanit
dc.contributor.authorItsara Srithanachai
dc.contributor.authorSurada Ueamanapong
dc.contributor.authorSunya Khunkhao
dc.contributor.authorBudsara Nararug
dc.contributor.authorChaba Suriya-Amaranout
dc.contributor.authorSurasak Niemcharoen
dc.date.accessioned2025-07-21T05:53:59Z
dc.date.issued2013-07-01
dc.identifier.doi10.4028/www.scientific.net/amr.717.113
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4067
dc.subjectReverse leakage current
dc.subject.classificationSemiconductor materials and interfaces
dc.titleStudy on Schottky Diode Characteristics Improving by X-Ray Irradiation
dc.typeArticle

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