Nonlinear switching in silicon-based ring resonators

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dc.contributor.authorKusalajeerung, Channarong
dc.contributor.authorChiangga, Surasak
dc.contributor.authorPitukwongsaporn, Santad
dc.contributor.authorYupapin, Preecha P.
dc.date.accessioned2026-08-06T10:01:56Z
dc.date.available2026-08-06T10:01:56Z
dc.date.issued2011-02-01
dc.description.abstractIn this paper, we analyzed and investigated the nonlinear switching characteristics of an optical device using a double-coupler silicon ring resonator in the presence of the linear losses, the Kerr nonlinearity, two-photon absorption, thermo-optic effects, free-carrier-induced absorption, and dispersion. Results obtained have shown that the general features of the nonlinear switching of the throughput and drop port signals are similar to a single-couple ring and nonlinear Fabry-Perot resonators, respectively. The interesting results of the double-coupler silicon ring resonator are the low switching power conditions and the linear amplification gain. The various applications can be provided by controlling the input-output of silicon-based resonators, for instance, by controlling the coupling ratio, free-carrier lifetime, and input wavelength, in which the multiple applications for optical switches, logic gates, and memories can be provided. © 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).
dc.identifier.citationOptical Engineering, 50(2), 2011
dc.identifier.doi10.1117/1.3533033
dc.identifier.issn00913286
dc.identifier.other2-s2.0-79551660882
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/3524
dc.sourceOptical Engineering
dc.subjectintegrated optics
dc.subjectnonlinear switching
dc.subjectoptical bistability
dc.subjectring resonator
dc.titleNonlinear switching in silicon-based ring resonators
dc.typeArticle

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