Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method

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dc.contributor.authorW. Pengchan
dc.contributor.authorT. Phetchakul
dc.contributor.authorAmporn Poyai
dc.date.accessioned2025-07-21T05:49:54Z
dc.date.issued2008-08-01
dc.identifier.doi10.4028/www.scientific.net/amr.55-57.765
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/1718
dc.subjectp�n junction
dc.subjectSaturation current
dc.subjectLeakage (economics)
dc.subjectDiffusion capacitance
dc.subject.classificationIntegrated Circuits and Semiconductor Failure Analysis
dc.titleExtraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method
dc.typeArticle

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