Tetramethyl Ammonium Hydroxide Etchant Improvement for Aluminum Passivation and Smooth of Silicon Surface

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dc.contributor.authorKamonwan Suttijalern
dc.contributor.authorJirawat Prabket
dc.contributor.authorRangson Muanghlua
dc.contributor.authorSurasak Niemcharoen
dc.date.accessioned2025-07-21T06:01:21Z
dc.date.issued2019-03-01
dc.identifier.doi10.1109/ieecon45304.2019.8939006
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/8225
dc.subjectTetramethylammonium hydroxide
dc.subjectSilicic acid
dc.subjectPassivation
dc.subjectTetramethylammonium
dc.subjectAmmonium hydroxide
dc.subjectIsotropic etching
dc.subject.classificationAdvanced MEMS and NEMS Technologies
dc.titleTetramethyl Ammonium Hydroxide Etchant Improvement for Aluminum Passivation and Smooth of Silicon Surface
dc.typeArticle

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