The Effects Of Gamma Irradiation on Threshold Voltage and Channel Mobility Models of PMOS

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dc.contributor.authorAmonrat Kerdpradist
dc.contributor.authorWisut Titiroongruang
dc.contributor.authorNarin Atiwongsangthong
dc.contributor.authorRangson Muanghlua
dc.contributor.authorAnucha Ruangphanit
dc.date.accessioned2025-07-21T06:00:17Z
dc.date.issued2018-07-01
dc.identifier.doi10.1109/ecticon.2018.8619885
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/7624
dc.subjectTransconductance
dc.subjectSaturation (graph theory)
dc.subject.classificationSemiconductor materials and devices
dc.titleThe Effects Of Gamma Irradiation on Threshold Voltage and Channel Mobility Models of PMOS
dc.typeArticle

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