Thermally Assisted Nonvolatile Memory in Monolayer MoS<sub>2</sub> Transistors

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dc.contributor.authorG. He
dc.contributor.authorH. Ramamoorthy
dc.contributor.authorC.-P. Kwan
dc.contributor.authorY.-H. Lee
dc.contributor.authorJ. Nathawat
dc.contributor.authorR. Somphonsane
dc.contributor.authorM. Matsunaga
dc.contributor.authorA. Higuchi
dc.contributor.authorT. Yamanaka
dc.contributor.authorN. Aoki
dc.contributor.authorY. Gong
dc.contributor.authorX. Zhang
dc.contributor.authorR. Vajtai
dc.contributor.authorP. M. Ajayan
dc.contributor.authorJ. P. Bird
dc.date.accessioned2025-07-21T05:57:16Z
dc.date.issued2016-09-26
dc.identifier.doi10.1021/acs.nanolett.6b02905
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/5940
dc.subjectHysteresis
dc.subjectNon-Volatile Memory
dc.subjectGate voltage
dc.subject.classificationAdvanced Memory and Neural Computing
dc.titleThermally Assisted Nonvolatile Memory in Monolayer MoS<sub>2</sub> Transistors
dc.typeArticle

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