Surface morphology and wettability for thin films of beta-iron disilicide produced through direct-current sputtering utilizing a pair of facing targets
| dc.contributor.author | Peerasil Charoenyuenyao | |
| dc.contributor.author | Nathaporn Promros | |
| dc.contributor.author | Rawiwan Chaleawpong | |
| dc.contributor.author | Tsuyoshi Yoshitake | |
| dc.date.accessioned | 2025-07-21T05:59:27Z | |
| dc.date.issued | 2018-01-01 | |
| dc.description.abstract | In the current work, beta-FeSi2 films were epitaxially produced onto Si(111) wafer substrates via usage of facing-targets direct-current sputtering (FTDCS). The temperature for substrate heating was maintained at 600 °C and the sputtering pressure was set at 1.33 × 10 -1 Pa. The surface morphology and contact angles of the beta-FeSi 2 films were explored consistently in this research. Images of three-dimensional AFM and FESEM for the beta-FeSi2 film surface revealed a smooth surface with a root mean square roughness of 1.31 nm and a porous area. The average contact angle between the dropped water and beta-FeSi 2 film surface was found to be 98.7°, establishing that the surface of the beta-FeSi 2 films was hydrophobic. The acquired experimental results revealed the commencement of the hydrophobic surface feature of the beta-FeSi 2 films produced via FTDCS approach. | |
| dc.identifier.doi | 10.1051/matecconf/201819201054 | |
| dc.identifier.uri | https://dspace.kmitl.ac.th/handle/123456789/7187 | |
| dc.subject | Morphology | |
| dc.subject | BETA (programming language) | |
| dc.subject | Root mean square | |
| dc.subject.classification | Semiconductor materials and interfaces | |
| dc.title | Surface morphology and wettability for thin films of beta-iron disilicide produced through direct-current sputtering utilizing a pair of facing targets | |
| dc.type | Article |