Photovoltaic Properties and Series Resistance of <i>p</i>-Type Si/Intrinsic Si/<i>n</i>-Type Nanocrystalline FeSi<sub>2</sub> Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering

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dc.contributor.authorWeerasaruth Kaenrai
dc.contributor.authorNathaporn Promros
dc.contributor.authorPhongsaphak Sittimart
dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorThanachai Changcharoen
dc.contributor.authorAdison Nopparuchikun
dc.contributor.authorTomohiro Nogami
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T06:00:49Z
dc.date.issued2018-11-22
dc.identifier.doi10.1166/jnn.2019.16234
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/7930
dc.subjectNanocrystalline material
dc.subjectEquivalent series resistance
dc.subject.classificationSemiconductor materials and interfaces
dc.titlePhotovoltaic Properties and Series Resistance of <i>p</i>-Type Si/Intrinsic Si/<i>n</i>-Type Nanocrystalline FeSi<sub>2</sub> Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering
dc.typeArticle

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